Researcher Profile and Settings

researchmap

https://researchmap.jp/read0081023

Research Interests

• semiconductor optical device
• semiconductor optical properties
• compound semiconductor
• carbon nitride
• rare earth
• quantum well
• quantum dot
• perovskite
• organic-inorganic hybrid material
• sol-gel
• photocatalyst

Research Areas

• Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering / 半導体光電子物性
• Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment / Semiconductor optical devices
• Nanotechnology/Materials / Optical engineering and photonics
• Nanotechnology/Materials / Nanostructure physics / ナノ構造物性

Research History

• 1994-2001 Research on ultra-fast optical switching devices and photo-physics of semiconductor nano-structures
• 2001-2005 Research on semiconductor lasers and and photo-physics of semiconductor nano-structures

Research Experience

• 同志社大学大学院, 理工学研究科博士後期課程, 2014/04 - Today
• Doshisha University, Faculty of Science and Engineering, 教授, 2011/04 - 2014/03
• Doshisha University, 工学部, 助教授, 2005/04 - 2011/03
• 独立行政法人 通信総合研究所, 基礎先端部門 光エレクトロニクスグル－プ, グループリーダー, 2001/04 - 2005/03
• Communications Research Laboratory, Leader of research group, 2001 - 2005
• 株式会社ATR研究所, 光電波通信研究所 通信デバイス研究室, 客員研究員, 1994/04 - 2001/03
• ATR Laboratories, Visiting researcher, 1994 - 2001

Degree

• Doctor of Engineering, Hokkaido University
• Master of Engineering, Hokkaido University

Association Memberships

• Phosphor Research Society, Jan. 2024, 9999, url

  対象リソースIRI
• 日本ゾルゲル学会, Apr. 2010, 9999
• 有機EL討論会, Apr. 2004, 9999
• THE JAPAN SOCIETY OF APPLIED PHYSICS, Apr. 1994, 9999

Committee Memberships

• 総務省 持続可能な電波有効利用のための基盤技術研究開発事業（FORWARD） 専門委員, 2024/04 - Today, Government
• 専門委員, 2021/09 - Today, 総務省 Beyond 5G研究開発促進事業, Government
• 専門委員, 2003/04 - 2024/03, 総務省 戦略的情報通信研究開発推進事業(SCOPE), Government
• Program committee, 2012/07 - 2013/07, 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON), Society

Awards

• IEDMS2015 Best Paper Award
  2015

Published Papers

• Preparation of red fluorescent materials for solution process using europium-doped benzoguanamine
  Takahiro Niimi; Haruki Takemura; Naoki Ohtani
  Japanese Journal of Applied Physics, IOP Publishing, 63(1) 02SP17 , Jan. 2024, Scientific journal
  

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• Fabrication of sodium-doped graphitic carbon nitride for photoelectrochemical water splitting into hydrogen
  Yuhei Kurita; Mizuki Aoki; Naoki Ohtani
  Japanese Journal of Applied Physics, IOP Publishing, 63(1) 01SP30 , Jan. 2024, Scientific journal
  

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• Improvement of Photocatalytic Effect of Carbon Nitride Dispersed in Calcium Alginate Thin Films by Using Platinum Cocatalyst and Application to Water Decomposition
  Koga Mizuno; Yuhei, Kurita; Mizuki Aoki; Naoki Ohtani
  Molecular Crystals and Liquid Crystals, Apr. 2023
• Examination of proper impurity doping and annealing conditions for solution processed Ga2O thin films
  Akihiro Momota; Takuya Shibahara; ChenYiZhan Li; Naoki Ohtani
  Japanese Journal of Applied Physics, 62(SF) SF1018 , Apr. 2023, Scientific journal
  

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• Polymer light-emitting diodes operating in ultraviolet region consisting of simple bilayer polymer thin film
  Masayuki Takahashi; Naoki Ohtani
  Molecular Crystals and Liquid Crystals, Feb. 2023, Scientific journal
  

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• Extraction of natural blue emissive pigments from Fraxinus lanuginosa by column chromatograph
  Tomoya Ohtsu; Ryuya Ono; Yusuke Kinou; Shuichiro Matsukura; Naoki Ohtani
  Molecular Crystals and Liquid Crystals, Feb. 2023, Scientific journal
• Improved conductivity and flatness of solution-processed transparent multilayer ZnO conductive films by stacking method
  Takumi Nojiri, Akihiro Momota, Naoki Ohtani
  Molecular Crystals and Liquid Crystals, 743(1) 35 - 42, Apr. 2022, Scientific journal
  

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• Solution-processed light-emitting diodes consisting of metal-oxide and organic-inorganic hybrid emissive thin films
  Ryota Kasuga; Misato Tachibana; Naoki Ohtani
  Japanese Journal of Applied Physics, IOP Publishing, 61 041001 , 01 Apr. 2022, Scientific journal
  

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• Analysis of electric-field domain formations and carrier transport phenomena in GaAs/AlAs asymmetric double-quantum-well superlattices
  Tomonori Matsui; Seiryu Nishiyama; Shoji Goto; Makoto Hosoda; Kouichi Akahane; Naoki Ohtani
  Japanese Journal of Applied Physics, IOP Publishing, 61(SB) SB1011 - SB1011, 01 Feb. 2022, Scientific journal
  

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• Anomalous photoluminescence properties of emissive polymer originating from modulated chemical structures affected by antioxidant effect of natural β-carotene
  Yuuki Magata; Naoki Ohtani
  Japanese Journal of Applied Physics, IOP Publishing, 60(5) 051003 - 051003, 01 May 2021, Scientific journal
  

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• Study of isolation method of green fluorescent pigments contained in cherry tomatoes using column chromatography
  A. Noma; N. Ohtani
  Japanese Journal of Applied Physics, 59(SC) SCCA09-1 - SCCA09-6, Feb. 2020, Scientific journal
  

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• Fabrication and Characterization of Carbon Nitride Fluorescent Material Using Annealed Melamine
  K. Wada; N. Ohtani
  Physica Status Solidi (b), 256(6) 1800521 , Jun. 2019, Scientific journal
• Fabrication of aluminum and gallium codoped ZnO multilayer transparent conductive films by spin coating method and discussion about improving their performance
  Yusuke Morita; Naoki Ohtani
  Japanese Journal of Applied Physics, Japan Society of Applied Physics, 57(2) 02CB03-1 - 02CB03-6, 01 Feb. 2018, International conference proceedings
  

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• Evidence for various higher-subband resonances and interferences in a GaAs/AlAs asymmetric quadruple-quantum-well superlattice analyzed from its photoluminescence properties
  Keisuke Hata; Makoto Hosoda; Kouichi Akahane; Naoki Ohtani
  PHYSICAL REVIEW B, AMER PHYSICAL SOC, 95(7) 075309-9 , Feb. 2017, Scientific journal
  

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• Improvement of photoelectric conversion efficiencies of dye-sensitized solar cells consisting of hemispherical TiO2 films
  Shogo Izumi; Ayame Mizuno; Naoki Ohtani
  PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 14 NO 6, WILEY-V C H VERLAG GMBH, 14(6) 1600186 , 2017, International conference proceedings
  

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• Characterization of dopant density dependence on transmittance and resistance of ZnO films fabricated using spin-coating method
  Yusuke Morita; Akira Emoto; Naoki Ohtani
  MOLECULAR CRYSTALS AND LIQUID CRYSTALS, TAYLOR & FRANCIS LTD, 641(1) 106 - 110, 2016, Scientific journal
  

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• Fabrication of silica glass thin films containing organic emissive materials and application to multi-layer organic light-emitting diodes
  Ryo Nakagawa; Yusuke Jitsui; Akira Emoto; Naoki Ohtani
  MOLECULAR CRYSTALS AND LIQUID CRYSTALS, TAYLOR & FRANCIS LTD, 641(1) 111 - 118, 2016, Scientific journal
  

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• Enhancement of radiative efficiencies of near-ultraviolet organic light-emitting diodes by localized surface plasmon resonance effect
  A. Matsuoka; A. Emoto; N. Ohtani
  Journal of Physics, 647(1) 012058 , Oct. 2015, Scientific journal
• 半導体超格子における電界ドメインの非線形ダイナミクス
  M. Hosoda; N. Ohtani
  Oyo Butsuri, 84(6) 508 , 2015
• Improved Photoluminescence Lifetime of Organic Emissive Materials Embedded in Organic-Inorganic Hybrid Thin Films Fabricated by Sol-Gel Method Using Tetraethoxysilane
  Naoki Ohtani; Masashi Tonoi
  MOLECULAR CRYSTALS AND LIQUID CRYSTALS, TAYLOR & FRANCIS LTD, 599(1) 132 - 138, Aug. 2014, Scientific journal
  

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• Synthesis of uniform and high-density silver nanoparticles by using Peltophorum pterocarpum plant extract
  Matheswaran Balamurugan; Natesan Kandasamy; Shanmugam Saravanan; Naoki Ohtani
  JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, 53(5) 05FB19 , May 2014, Scientific journal
  

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• Structural and optical studies of pure and Ni-doped ZnO nanoparticles synthesized by simple solution combustion method
  Murugesan Silambarasan; Shanmugam Saravanan; Naoki Ohtani; Tetsuo Soga
  JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, 53(5) 05FB16 , May 2014, Scientific journal
  

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• Fabrication and optical characterization of organic-inorganic hybrid films using ultraviolet-curable silsesquioxanes
  Hironori Akiyama; Naoki Ohtani
  Japanese Journal of Applied Physics, 53(2) 02BC18 , 2014, Scientific journal
  

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• Excitonic Rabi oscillations in self-assembled quantum dots in the presence of a local field effect
  K. Asakura; Y. Mitsumori; H. Kosaka; K. Edamatsu; K. Akahane; N. Yamamoto; M. Sasaki; N. Ohtani
  Physical Review B, 87(24) 241301 , Jun. 2013, Scientific journal
• Fabrication of near-infrared polymer light-emitting-diodes using dispersed laser dye
  Yusuke Jitsui; Naoki Ohtani
  JOURNAL OF THE KOREAN PHYSICAL SOCIETY, KOREAN PHYSICAL SOC, 60(10) 1557 - 1559, May 2012, Scientific journal
  

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• Excitonic Rabi oscillations in self-assembled quantum dots studied by photon echoes
  Kenta Asakura; Yasuyoshi Mitsumori; Hideo Kosaka; Keiichi Edamatsu; Kouichi Akahane; Naokatsu Yamamoto; Masahide Sasaki; Naoki Ohtani
  PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 12, WILEY-V C H VERLAG GMBH, 9(12) 2513 - 2516, 2012, International conference proceedings
  

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• White Organic Light-Emitting Diodes Using Two Phosphorescence Materials in a Starburst Hole-Transporting Layer
  Tomoya Inden; Tomoya Hishida; Masayuki Takahashi; Masato Ohsumi; Naoki Ohtani
  INTERNATIONAL JOURNAL OF PHOTOENERGY, HINDAWI PUBLISHING CORPORATION, 2012 703496 , 2012, Scientific journal
  

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• Excitonic Rabi oscillations in semiconductor quantum dot observed by photon echo spectroscopy
  K. Asakura; Y. Mitsumori; H. Kosaka; K. Edamatsu; K. Akahane; N. Yamamoto; M. Sasaki; N. Ohtani
  PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, AMER INST PHYSICS, 1399 529 - 530, 2011, International conference proceedings
  

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• Fabrication of Organic Light-Emitting Diodes Using Photosynthetic Pigments Extracted from Spinach
  Naoki Ohtani; Natsuko Kitagawa; Takashi Matsuda
  JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOC APPLIED PHYSICS, 50(1) 01BC08 , Jan. 2011, Scientific journal
  

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• Organic near-infrared photodiodes containing a wide-bandgap polymer and an n-type dopant in the active layer
  Naoki Ohtani; Kiichiro Nakajima; Ken-ichi Bando
  PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 9, WILEY-V C H VERLAG GMBH, 8(9) 2907 - 2910, 2011, International conference proceedings
  

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• Improvement of carrier transport and luminous efficiency of organic light-emitting diodes by introducing a co-deposited active layer
  N. Ohtani; M. Murata; K. Kashiwabara; K. Kurata
  16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), IOP PUBLISHING LTD, 193 012106 , Mar. 2010, Scientific journal
  

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• Observation and numerical analysis of quantum subband energies from photoluminescence spectra of organic multiple-quantum wells
  Naoki Ohtani; Masaya Murata; Takafumi Yamamoto
  MICROELECTRONICS JOURNAL, ELSEVIER SCI LTD, 40(4-5) 867 - 868, Apr. 2009, Scientific journal
  

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• Experimental study on the condition of formation of electric-field domains in multiple finite superlattices
  N. Ohtani; S. Noma; K. Akahane; M. Hosoda; K. Fujita
  Microelectronics Journal, 40(4-5) 818 - 820, Jan. 2009, Scientific journal
• 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran (DCM)-doping density dependence of luminescence spectra and white emission in polymer light-emitting diodes
  Akinori Inoue; Takeshi Hosokawa; Motoki Haishi; Naoki Ohtani
  PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 1, WILEY-V C H VERLAG GMBH, 6(1) 334 - 337, 2009, International conference proceedings
  

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• Influence of co-deposited active layers on carrier transport and luminescent properties in organic light emitting diodes
  Masaya Murata; Takayuki Yamamoto; Motoki Haishi; Taro Ando; Naoki Ohtani
  PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 1, WILEY-V C H VERLAG GMBH, 6(1) 330 - +, 2009, International conference proceedings
  

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• Photoluminescence properties of annealed InAs quantum dots capped by InGaAs layers
  Shingo Hiratsuka; Shanugam Saravanan; Takahisa Harayama; Naoki Ohtani
  PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 1, WILEY-V C H VERLAG GMBH, 6(1) 189 - +, 2009, International conference proceedings
  

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• Quantum-Well Microtubes and Generation of Whispering-Gallery Modes
  HOSODA Makoto; OHTANI Naoki
  J. Surf. Sci. Soc. Jpn., The Surface Science Society of Japan, 29(12) 740 - 746, 10 Dec. 2008
  

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• Electric-field-direction dependence of carrier injection into high-energy states in asymmetric GaAs/AlAs multiple-quantum wells embedded in an n-i-n diode
  H. Kitamura; S. Hiratsuka; M. Hosoda; K. Akahane; and; N. Ohtani
  Journal of Physics, 109 012021 , Apr. 2008, Scientific journal
  

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• Various photoluminescence properties due to Gamma-X resonance in type-I GaAs/AlAs multi-quantum wells consisting of quantum wells with different thicknesses
  Naoki Ohtani; Hiroyuki Endo; Shingo Hiratsuka; Hiroshi Kitamura; Toshinari Takamatsu; Makoto Hosoda
  PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, ELSEVIER SCIENCE BV, 40(6) 2016 - 2018, Apr. 2008, Scientific journal
  

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• Quantum size effect on photoluminescence and electroluminescence properties in organic multiple quantum wells
  Takayuki Yamamoto; Masaya Murata; Motoki Haishi; Taro Ando; Naoki Ohtani
  INTERNATIONAL SYMPOSIUM ON ADVANCED NANODEVICES AND NANOTECHNOLOGY, IOP PUBLISHING LTD, 109 012036 , 2008, International conference proceedings
  

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• Improvement of radiative efficiency and wavelength-tuning by TPD-doping in organic light emitting diode using Poly [methylmethacrylate-co-(7-(4-trifluoromethyl)coumarin acrylamide)] (PCA) - art. no. 012011
  Motoki Haishi; Takayuki Yamamoto; Masaya Murata; Naoki Ohtani
  INTERNATIONAL SYMPOSIUM ON ADVANCED NANODEVICES AND NANOTECHNOLOGY, IOP PUBLISHING LTD, 109 12011 - 12011, 2008, International conference proceedings
  

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• Photoluminescence properties affected by carrier transport between X and different first excited states originating from interface imperfection in GaAs/AlAs multi-quantum wells
  Hiroyuki Endo; Shingo Hiratsuka; Hiroshi Kitamura; Toshinari Takamatsu; Makoto Hosoda; Naoki Ohtani
  JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOC APPLIED PHYSICS, 47(1) 682 - 684, Jan. 2008, Scientific journal
  

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• Strong optical emissions from two-dimensional metal photonic crystals with semiconductor multiple quantum wells
  Shin-ichiro Gozu; Akio Ueta; Kouichi Akahane; Naokatsu Yamamoto; Masahiro Tsuchiya; Naoki Ohtani
  JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 101(8) 086107 , Apr. 2007, Scientific journal
  

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• Metamorphic molecular beam epitaxy growth and selective wet etching for epitaxial layer lift-off of AlAsSb toward optical waveguides with high optical confinement
  Shin-ichiro Gozu; Kouichi Akahane; Naokatsu Yamamoto; Akio Ueta; Naoki Ohtani; Masahiro Tsuchiya
  JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 301(1) 955 - 958, Apr. 2007, Scientific journal
  

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• Growth of InGaSb quantum dot structures on GaAs and silicon substrates
  Naokatsu Yamamoto; Kouichi Akahane; Shin-ichirou Gozu; Akio Ueta; Naoki Ohtani; Masahiro Tsuchiya
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, INST PURE APPLIED PHYSICS, 46(4B) 2401 - 2404, Apr. 2007, Scientific journal
  

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• Site control of very low density InAs QDs on patterned GaAs nano-wire surfaces
  Akio Ueta; Kouichi Akahane; Sinichiro Gozu; Naokatsu Yamamoto; Naoki Ohtani; Masahiro Tsuchiya
  JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 301(1) 846 - 848, Apr. 2007, Scientific journal
  

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• (In)GaSb/AlGaSb quantum wells grown on Si substrates
  Kouichi Akahane; Naokatsu Yamamoto; Shin-ichiro Gozu; Akio Ueta; Naoki Ohtani
  THIN SOLID FILMS, ELSEVIER SCIENCE SA, 515(10) 4467 - 4470, Mar. 2007, Scientific journal
  

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• Strong optical confinements inside the wavelength-size metal mirror microcavities: New concept for small light emitters using InAsSb QDs microcavities
  Akio Ueta; Sin-ichiro Gozu; Kouichi Akahane; Naokatsu Yamamoto; Masahiro Tsuchiya; Naoki Ohtani
  PHYSICS OF SEMICONDUCTORS, PTS A AND B, AMER INST PHYSICS, 893 1145 - +, 2007, International conference proceedings
• Various photoluminescence properties observed in a GaAs/AlAs asymmetric double-quantum-well superlattice
  Naoki Ohtani; Makoto Hosoda
  PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 2, WILEY-V C H VERLAG GMBH, 4(2) 353 - +, 2007, International conference proceedings
  

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• Optical cavity properties of metal mirror microcavities with InAsSb quantum dots
  Akio Ueta; Sin-ichiro Gozu; Kouichi Akahane; Naokatsu Yamamoto; Masahiro Tsuchiya; Naoki Ohtani
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, INST PURE APPLIED PHYSICS, 45(11) 8650 - 8652, Nov. 2006, Scientific journal
  

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• Residual carrier density in GaSb grown on Si substrates
  Kouichi Akahane; Naokatsu Yamamoto; Shin-ichiro Gozu; Akio Ueta; Naoki Ohtani
  THIN SOLID FILMS, ELSEVIER SCIENCE SA, 515(2) 748 - 751, Oct. 2006, Scientific journal
  

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• Nanoscale structure fabrication of multiple AlGaSb/InGaSb quantum wells by reactive ion etching with chlorine-based gases toward photonic crystals
  Shin-ichiro Gozu; Kouichi Akahane; Naokatsu Yamamoto; Akio Ueta; Naoki Ohtani; Masahiro Tsuchiya
  JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, A V S AMER INST PHYSICS, 24(5) 2291 - 2294, Sep. 2006, Scientific journal
  

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• Numerical method for coherent electron dynamics with potential-dependent effective-mass distributions in semidonductor heterostructures
  T. Ando; Y. Ohtake; N. Ohtani
  Physical Review E, 73(6) 066702 , Jun. 2006, Scientific journal
  

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• Study of InAsN quantum dots on GaAs substrates by molecular beam epitaxy
  A Ueta; K Akahane; S Gozu; N Yamamoto; N Ohtani
  PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, WILEY-V C H VERLAG GMBH, 243(7) 1514 - 1518, Jun. 2006, Scientific journal
  

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• Metamorphic InGaAs/AlAsSb quantum wells grown on GaAs substrates for intersubband devices operating toward short-wavelength region
  S. Gozu; A. Ueta; K. Akahane; N. Yamamoto; N. Ohtani; M. Tsuchiya
  Electronics Letters, 42(10) 601 - 602, May 2006, Scientific journal
  

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• Optical communications waveband lasing from Sb-based quantum dot vertical-cavity laser
  N Yamamoto; K Akahane; SI Gozu; A Ueta; N Ohtani
  PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, ELSEVIER SCIENCE BV, 32(1-2) 516 - 519, May 2006, Scientific journal
  

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• Change in band configuration of In0.57Ga0.43As1-xSbx/AlAs0.48Sb0.52 quantum wells from type-II to type-I by increasing Sb composition x
  S Gozu; K Akahane; N Yamamoto; A Ueta; N Ohtani
  PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, ELSEVIER SCIENCE BV, 32(1-2) 230 - 233, May 2006, Scientific journal
  

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• 1.5 mu m emission from InAs quantum dots with InGaAsSb strain-reducing layer grown on GaAs substrates
  K Akahane; N Yamamoto; S Gozu; A Ueta; N Ohtani
  PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, ELSEVIER SCIENCE BV, 32(1-2) 81 - 84, May 2006, Scientific journal
  

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• Observation of subband resonances between high-energy states in a series of asymmetric double-quantum-well superlattice systems
  M Hosoda; M Sato; Y Hirose; T Shioji; J Nohgi; C Domoto; N Ohtani
  PHYSICAL REVIEW B, AMERICAN PHYSICAL SOC, 73(16) 165329 , Apr. 2006, Scientific journal
  

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• Selective formation of self-organized InAs quantum dots grown on patterned GaAs substrates by molecular beam epitaxy
  A Ueta; K Akahane; S Gozu; N Yamamoto; N Ohtani
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, INST PURE APPLIED PHYSICS, 45(4B) 3556 - 3559, Apr. 2006, Scientific journal
  

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• Interface states of AlSb/InAs heterointerfacee with AlAs like interface
  S. Gozu; K. Akahane; N. Yamamoto; A. Ueta; T. Ando; N. Ohtani
  Japanese Journal of Applied Physics, 45(4) 3540 - 3543, Apr. 2006, Scientific journal
  

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• 1.55-mu m-waveband emissions from Sb-based quantum-dot vertical-cavity surface-emitting laser structures fabricated on GaAs substrate
  N Yamamoto; K Akahane; S Gozu; A Ueta; N Ohtani
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, INST PURE APPLIED PHYSICS, 45(4B) 3423 - 3426, Apr. 2006, Scientific journal
  

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• All-optical control of the resonant-photon tunneling effect observed in GaAs/AlGaAs multilayered structures containing quantum dots
  N Yamamoto; K Akahane; SI Gozu; N Ohtani
  APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 87(23) 231119 , Dec. 2005, Scientific journal
  

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• Initial growth stage of GaSb on Si(001) substrates with AlSb initiation layers
  K Akahane; N Yamamoto; S Gozu; A Ueta; N Ohtani
  JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 283(3-4) 297 - 302, Oct. 2005, Scientific journal
  

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• Electron scattering between X and L indirect valleys in type-I GaAs/AlAs semiconductor superlattices
  M Hosoda; J Nohgi; N Ohtani
  PHYSICAL REVIEW B, AMER PHYSICAL SOC, 72(3) 033317 , Jul. 2005, Scientific journal
  

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• Circular polarization switch by using photo-chemically etched silicon
  N. Yamamoto; N. Ohtani; T. Matsuno; H. Takai
  Japanese Journal of Applied Physics, 44(7A) 4749 - 4751, Jul. 2005, Scientific journal
• Over 1.3 mu m continuous-wave laser emission from InGaSb quantum-dot laser diode fabricated on GaAs substrates
  N Yamamoto; K Akahane; S Gozu; N Ohtani
  APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 86(20) 203118 , May 2005, Scientific journal
  

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• Characteristics of coupled mode of excitonic quantum beat and coherent longitudinal optical phonon in GaAs/AlAs multiple quantum wells
  T Furuichi; K Mizoguchi; O Kojima; K Akahane; N Yamamoto; N Ohtani; M Nakayama
  JOURNAL OF LUMINESCENCE, ELSEVIER SCIENCE BV, 112(1-4) 142 - 145, Apr. 2005, Scientific journal
  

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• Strong photoluminescence and laser operation of InAs quantum dots covered by a GaAsSb strain-reducing layer
  K Akahane; N Yamamoto; S Gozu; N Ohtani
  PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, ELSEVIER SCIENCE BV, 26(1-4) 395 - 399, Feb. 2005, International conference proceedings
  

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• Excitonic quantum beats dressed with coherent phonons
  K Mizoguchi; T Furuichi; O Kojima; M Nakayama; K Akahane; N Yamamoto; N Ohtani
  ULTRAFAST PHENOMENA XIV, SPRINGER-VERLAG BERLIN, 79 257 - 259, 2005, International conference proceedings
• Demonstration of a nanophotonic NOT-gate using near-field optically coupled quantum dots
  Tadashi Kawazoe; Kiyoshi Kobayashi; Kouichi Akahane; Naokatsu Yamamoto; Naoki Ohtani; Motoichi Ohtsu
  2005 5th IEEE Conference on Nanotechnology, 1 579 - 582, 2005, International conference proceedings
  

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• Anomalous photoluminescence branches observed in an asymmetric double-quantum-well superlattice
  N Ohtani; N Yamamoto; J Nohgi; M Hosoda
  Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 8, WILEY-V C H VERLAG GMBH, 2(8) 3006 - 3009, 2005, International conference proceedings
  

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• Growth of InAsSb quantum dots on GaAs substrates using periodic supply epitaxy
  A Ueta; SI Gozu; K Akahane; N Yamamoto; N Ohtani
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, INST PURE APPLIED PHYSICS, 44(20-23) L696 - L698, 2005, Scientific journal
  

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• High-quality GaSb/AlGaSb quantum well grown on Si substrate
  K Akahane; N Yamamoto; S Gozu; N Ohtani
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, INST PURE APPLIED PHYSICS, 44(1-7) L15 - L17, 2005, Scientific journal
  

  DOI URL
• Over 1.3 mu m CW laser emission from InGaSb quantum-dot vertical-cavity surface-emitting laser on GaAs substrate
  N Yamamoto; K Akahane; S Gozu; N Ohtani
  ELECTRONICS LETTERS, IEE-INST ELEC ENG, 40(18) 1120 - 1121, Sep. 2004, Scientific journal
  

  DOI URL
• Coupled mode of the coherent optical phonon and excitonic quantum beat in GaAs/AlAs multiple quantum wells
  K Mizoguchi; O Kojima; T Furuichi; M Nakayama; K Akahane; N Yamamoto; N Ohtani
  PHYSICAL REVIEW B, AMER PHYSICAL SOC, 69(23) 233302 , Jun. 2004, Scientific journal
  

  DOI URL
• All-optical switching and memorizing devices using resonant photon tunneling effect in multi-layered GaAs/AlGaAs structures
  N Yamamoto; N Ohtani
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, INST PURE APPLIED PHYSICS, 43(4A) 1393 - 1397, Apr. 2004, Scientific journal
  

  DOI URL
• Formation of electric-field domains in an asymmetric double-quantum-well GaAs/AlAs superlattice
  N Ohtani; Y Hirose; T Nishimura; T Aida; M Hosoda
  SEMICONDUCTOR SCIENCE AND TECHNOLOGY, IOP PUBLISHING LTD, 19(4) S89 - S90, Apr. 2004, Scientific journal
  

  DOI URL
• Uniaxial-strain-induced transition from type-II to type-I band configuration of quantum well microtubes
  N Ohtani; K Kishimoto; K Kubota; S Saravanan; Y Sato; S Nashima; P Vaccaro; T Aida; M Hosoda
  PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, ELSEVIER SCIENCE BV, 21(2-4) 732 - 736, Mar. 2004, Scientific journal
  

  DOI URL
• Growth of high-density InGaSb quantum dots on silicon atoms irradiated GaAs substrates
  N Yamamoto; K Akahane; N Ohtani
  PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, ELSEVIER SCIENCE BV, 21(2-4) 322 - 325, Mar. 2004, Scientific journal
  

  DOI URL
• Long-wavelength light emission from InAs quantum dots covered by GaAsSb grown on GaAs substrates
  K Akahane; N Yamamoto; N Ohtani
  PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, ELSEVIER SCIENCE BV, 21(2-4) 295 - 299, Mar. 2004, Scientific journal
  

  DOI URL
• Heteroepitaxial growth of GaSb on Si(001) substrates
  K Akahane; N Yamamoto; S Gozu; N Ohtani
  JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 264(1-3) 21 - 25, Mar. 2004, Scientific journal
  

  DOI URL
• Self-consistent calculation of subband occupation and electron-hole plasma effects: Variational approach to quantum well states with Hartree and exchange-correlation interactions
  T Ando; H Taniyama; N Ohtani; M Nakayama; M Hosoda
  JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 94(7) 4489 - 4501, Oct. 2003, Scientific journal
  

  DOI URL
• Role of A1 in spacer layer on the formation of stacked InAs quantum dot structures on InP(311)B
  K Akahane; N Yamamoto; N Ohtani; Y Okada; M Kawabe
  JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 256(1-2) 7 - 11, Aug. 2003, Scientific journal
  

  DOI URL
• Quantum-well microtube constructed from a freestanding thin quantum-well layer
  M Hosoda; Y Kishimoto; M Sato; S Nashima; K Kubota; S Saravanan; PO Vaccaro; T Aida; N Ohtani
  APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 83(5) 1017 - 1019, Aug. 2003, Scientific journal
  

  DOI URL
• Photoluminescence property of uniaxial strained GaAs/AlGaAs quantum wells contained in a micro-tube
  N Ohtani; K Kubota; P Vaccaro; T Aida; A Hosoda
  PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, ELSEVIER SCIENCE BV, 17(1-4) 391 - 392, Apr. 2003, Scientific journal
  

  DOI URL
• Growth of InAs quantum dots on a low lattice-mismatched AlGaSb layer prepared on GaAs(001) substrates
  N Yamamoto; K Akahane; S Gozu; N Ohtani
  FUNCTIONAL NANOMATERIALS FOR OPTOELECTRONICS AND OTHER APPLICATIONS, TRANS TECH PUBLICATIONS LTD, 99-100(1) 49 - 52, 2003, Scientific journal
• Fabrication of ultra-high density InAs-stacked quantum dots by strain-controlled growth on InP(311)B substrate
  K Akahane; N Ohtani; Y Okada; M Kawabe
  JOURNAL OF CRYSTAL GROWTH, ELSEVIER SCIENCE BV, 245(1-2) 31 - 36, Nov. 2002, Scientific journal
  

  DOI URL
• Numerically stable and flexible method for solutions of the Schrodinger equation with self-interaction of carriers in quantum wells
  T Ando; H Taniyama; N Ohtani; M Hosoda; M Nakayama
  IEEE JOURNAL OF QUANTUM ELECTRONICS, IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 38(10) 1372 - 1383, Oct. 2002, Scientific journal
  

  DOI URL
• Photoluminescence from high Gamma-electron subbands and intersubband electroluminescence using X-Gamma carrier injection in a simple GaAs/AlAs superlattice
  C Domoto; T Nishimura; N Ohtani; K Kuroyanagi; PO Vaccaro; T Aida; H Takeuchi; M Nakayama
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, INST PURE APPLIED PHYSICS, 41(8) 5073 - 5077, Aug. 2002, Scientific journal
  

  DOI URL
• Photoluminescence of GaAs/AlGaAs micro-tubes containing uniaxially strained quantum wells
  K Kubota; PO Vaccaro; N Ohtani; Y Hirose; M Hosoda; T Aida
  PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, ELSEVIER SCIENCE BV, 13(2-4) 313 - 316, Mar. 2002, Scientific journal
  

  DOI URL
• Excitation of right- and left-circularly polarized photoluminescence in silicon-based luminescent materials
  N Yamamoto; Hosako, I; M Akiba; N Ohtani; H Takai
  JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 91(5) 2725 - 2728, Mar. 2002, Scientific journal
  

  DOI URL
• Intersubband electroluminescence using X-Gamma carrier injection in a GaAs/AlAs double-quantum-well superlattice
  C Domoto; N Ohtani; K Kuroyanagi; PO Vaccaro; T Nishimura; H Takeuchi; M Nakayama
  PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, SPRINGER-VERLAG BERLIN, 87 729 - 730, 2001, International conference proceedings
• Intersubband electroluminescence using X-Γ carrier injection in a GaAs/AlAs superlattice
  C. Domoto; N. Ohtani; K. Kuroyanagi; P. O. Vaccaro; H. Takeuchi; M. Nakayama; T. Nishimura
  Applied Physics Letters, American Institute of Physics Inc., 77(6) 848 - 850, 07 Aug. 2000, Scientific journal
  

  DOI URL
• Electric-field effects on photoluminescence properties in a GaAs/AlAs marginal type-I superlattice
  N Ohtani; C Domoto; N Egami; H Mimura; T Ando; M Nakayama; M Hosoda
  PHYSICA E, ELSEVIER SCIENCE BV, 7(3-4) 586 - 589, May 2000, Scientific journal
  

  DOI URL
• Anomalous photoluminescence originating from resonance between X and intermediate states in GaAs/AlAs superlattices
  N Ohtani; C Domoto; K Kuroyanagi; N Egami; M Hosoda
  JOURNAL OF LUMINESCENCE, ELSEVIER SCIENCE BV, 87-9(1) 415 - 417, May 2000, Scientific journal
  

  DOI URL
• Photoluminescence and carrier transport properties via the intersubband scattering in a GaAs/AlAs superlattice under applied electric field
  M Ando; M Nakayama; H Takeuchi; H Nishimura; N Ohtani; N Egami; M Hosoda; H Mimura
  JOURNAL OF LUMINESCENCE, ELSEVIER SCIENCE BV, 87-9(1) 411 - 414, May 2000, Scientific journal
  

  DOI URL
• 半導体超格子における電界ドメイン形成と光電流発振
  大谷 直毅
  固体物理, アグネ技術センタ-, 35(4) 269 - 276, Apr. 2000
• Carrier transport in GaAs/AlAs type-II superlattices under electric field: Switch from X-X to Gamma-Gamma transfer
  M Hosoda; N Ohtani; K Kuroyanagi; C Domoto
  APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 76(14) 1866 - 1868, Apr. 2000, Scientific journal
  

  DOI URL
• Electric-field-induced combination of Wannier-Stark localization and type-I-type-II crossover in a marginal type-I GaAs/AlAs superlattice
  N Ohtani; C Domoto; N Egami; H Mimura; M Ando; M Nakayama; M Hosoda
  PHYSICAL REVIEW B, AMER PHYSICAL SOC, 61(11) 7505 - 7510, Mar. 2000, Scientific journal
  

  DOI URL
• Phase diagram of static and dynamic electric field domain formation in semiconductor superlattices
  N Ohtani; N Egami; HT Grahn; KH Ploog
  PHYSICA B-CONDENSED MATTER, ELSEVIER SCIENCE BV, 272(1-4) 205 - 208, Dec. 1999, Scientific journal
  

  DOI URL
• Light-hole Stark-ladder photoluminescence induced by heavy-hole-light-hole resonance in a GaAs/InAIAs superlattice
  K Kuroyanagi; N Ohtani; N Egami; K Tominaga; M Hosoda; H Takeuchi; M Nakayama
  PHYSICA B, ELSEVIER SCIENCE BV, 272(1-4) 198 - 201, Dec. 1999, Scientific journal
  

  DOI URL
• Controllable bistabilities and bifurcations in a photoexcited GaAs AlAs superlattice
  KJ Luo; SW Teitsworth; H Kostial; HT Grahn; N Ohtani
  APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 74(25) 3845 - 3847, Jun. 1999, Scientific journal
  

  DOI URL
• Influence of strain effects on hole-subband resonances in GaAs/InAlAs superlattices
  K Kuroyanagi; N Ohtani; N Egami; K Tominaga; M Nakayama
  APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, 142(1-4) 633 - 636, Apr. 1999, Scientific journal
  

  DOI URL
• Gamma-Chi electron transfer in GaAs/AlAs type-I superlattices
  H Mimura; M Hosoda; N Ohtani; K Yokoo
  APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, 142(1-4) 624 - 628, Apr. 1999, Scientific journal
  

  DOI URL
• Electroluminescence in undoped GaAs/AlAs superlattice due to avalanche breakdown
  C Domoto; N Ohtani; K Kuroyanagi; PO Vaccaro; N Egami
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, JAPAN J APPLIED PHYSICS, 38(4B) 2577 - 2579, Apr. 1999, Scientific journal
  

  DOI URL
• Transition between static and dynamic electric-field domain formation in weakly coupled GaAs/AlAs superlattices
  N Ohtani; N Egami; HT Grahn; KH Ploog; LL Bonilla
  PHYSICAL REVIEW B, AMER PHYSICAL SOC, 58(12) R7528 - R7531, Sep. 1998, Scientific journal
  

  DOI URL
• Carrier transport affected by Gamma-X transfer in type-I GaAs/AlAs superlattices
  M Hosoda; N Ohtani; H Mimura; K Tominaga; T Watanabe; H Inomata; K Fujiwara
  PHYSICAL REVIEW B, AMER PHYSICAL SOC, 58(11) 7166 - 7180, Sep. 1998, Scientific journal
  

  DOI URL
• Photoluminescence detection of the X-electron resonance in a GaAs/AlAs type-II superlattice
  M Nakayama; M Ando; Y Kumamoto; H Nishimura; N Ohtani; N Egami; K Fujiwara; M Hosoda
  PHYSICAL REVIEW B, AMER PHYSICAL SOC, 58(11) 7216 - 7221, Sep. 1998, Scientific journal
  

  DOI URL
• Carrier transport and photoluminescence affected by Gamma-X resonance in GaAs-AlAs type-I superlattices
  H Mimura; M Hosoda; N Ohtani; K Fujiwara; K Yokoo
  PHYSICA E, ELSEVIER SCIENCE BV, 2(1-4) 308 - 312, Jul. 1998, Scientific journal
  

  DOI URL
• Photocurrent self-oscillations in undoped GaAs/AlAs superlattices modulated by an external ac voltage
  N Ohtani; N Egami; K Fujiwara; HT Grahn
  SOLID-STATE ELECTRONICS, PERGAMON-ELSEVIER SCIENCE LTD, 42(7-8) 1509 - 1513, Jul. 1998, Scientific journal
  

  DOI URL
• Wavefunction delocalization of strongly-localized Stark-ladder states in a GaAs/AlAs superlattice
  M Ando; M Nakayama; H Nishimura; M Hosoda; N Ohtani; N Egami; K Fujiwara
  SOLID-STATE ELECTRONICS, PERGAMON-ELSEVIER SCIENCE LTD, 42(7-8) 1499 - 1503, Jul. 1998, Scientific journal
  

  DOI URL
• Carrier density dependence of transitions between chaotic and periodic photocurrent oscillations in undoped GaAs/AlAs superlattices
  N. Ohtani; N. Egami; H. T. Grahn; K. H. Ploog
  Physica B: Condensed Matter, Elsevier, 249-251(1) 878 - 881, 17 Jun. 1998, Scientific journal
  

  DOI URL
• Influence of Gamma-x resonance on photocurrent-voltage characteristics in GaAs/InAlAs strained superlattices
  K Kuroyanagi; N Ohtani; N Egami; K Tominaga; M Nakayama
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, JAPAN J APPLIED PHYSICS, 37(3B) 1650 - 1653, Mar. 1998, Scientific journal
  

  DOI URL
• Photocurrent and photoluminescence affected by G-X electron transfer in type-I GaAs-AlAs superlattices
  H. Mimura; M. Hosoda; N. Ohtani; K. Yokoo
  Japanese Journal of Applied Physics, 37(3B) 1650 - 1653, Mar. 1998, Scientific journal
• Influence of Gamma-X mixing on carrier transport and photoluminescence in GaAs/AlAs type-I superlattices
  N Ohtani; M Hosoda; H Mimura; K Tominaga; T Watanabe; K Fujiwara
  SUPERLATTICES AND MICROSTRUCTURES, ACADEMIC PRESS LTD, 23(1) 19 - 22, 1998, Scientific journal
  

  DOI URL
• Current self-oscillations in undoped, photoexcited GaAs/AlAs type-I superlattices
  N Ohtani; N Egami; K Kuroyanagi; M Ando; M Hosoda; HT Grahn; KH Ploog
  PHYSICA STATUS SOLIDI B-BASIC RESEARCH, AKADEMIE VERLAG GMBH, 204(1) 489 - 492, Nov. 1997, Scientific journal
  

  DOI URL
• Photoluminescence from the barrier-X state in GaAs/InAlAs strained superlattices under applied-bias voltages
  K Kuroyanagi; N Ohtani; N Egami; K Tominaga; M Ando; M Nakayama
  PHYSICA STATUS SOLIDI B-BASIC RESEARCH, AKADEMIE VERLAG GMBH, 204(1) 187 - 190, Nov. 1997, Scientific journal
  

  DOI URL
• Avalanche breakdown mechanism originating from G-X-G transfer in GaAs/AlAs superlattices
  M. Hosoda; K. Tominaga; N. Ohtani; K. Kuroyanagi; N. Egami; H. Mimura; K. Kawashima; K. Fujiwara
  Applied Physics Letters, 71(19) 2827 - 2829, Nov. 1997, Scientific journal
  

  DOI URL
• Anomalously large negative differential resistance due to G-X resonances in type-I GaAs/AlAs superlattices
  M. Hosoda; N. Ohtani; K. Tominaga; H. Mimura; T. Watanabe
  Physical Review B, 56(11) 6432 - 6435, Sep. 1997, Scientific journal
  

  DOI URL
• Observation of Gamma-X resonances in type-I GaAs/AlAs semiconductor superlattices: Anomaly in photoluminescence
  M Hosoda; H Mimura; N Ohtani; K Tominaga; K Fujita; T Watanabe; H Inomata; M Nakayama
  PHYSICAL REVIEW B, AMERICAN PHYSICAL SOC, 55(20) 13689 - 13696, May 1997, Scientific journal
• Subband-resonance oscillations in undoped GaAs/AlAs type-II superlattices under photoexcitation
  H Mimura; M Hosoda; N Ohtani; HT Grahn; K Yokoo
  APPLIED SURFACE SCIENCE, ELSEVIER SCIENCE BV, 113(1) 85 - 89, Apr. 1997, Scientific journal
  

  DOI URL
• Stark ladder photoluminescence of X states in GaAs/AlAs type-I superlattices
  N. Ohtani; M. Hosoda; H. Mimura; K. Tominaga; T. Watanabe
  Japanese Journal of Applied Physics, 36(3B) 1184 - 1187, Mar. 1997, Scientific journal
  

  DOI URL
• Influence of G-X resonances on G ground state electron occupation in type-I GaAs/AlAs superlattice
  M. Hosoda; K. Tominaga; N. Ohtani; H. Mimura; M. Nakayama
  Applied Physics Letters, 70(12) 1581 - 1583, Mar. 1997, Scientific journal
  

  DOI URL
• Investigation of X levels in GaAs/InAlAs strained superlattices
  K. Kuroyanagi; N. Ohtani; N. Egami; K. Tominaga; M. Ando; M. Nakayama
  Nonlinear Optics, 18(2) 261 - 264, 1997, Scientific journal
• Photocurrent self-oscillations in a direct-gap GaAs-AlAs superlattice
  N Ohtani; M Hosoda; HT Grahn
  APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 70(3) 375 - 377, Jan. 1997, Scientific journal
  

  DOI URL
• Structural and optical investigations of high quality InGaAs/InAlAs short period superlattices grown on an InGaAs quasisubstrate
  K Tominaga; M Hosoda; N Ohtani; T Watanabe; H Inomata; K Fujiwara
  JOURNAL OF APPLIED PHYSICS, AMER INST PHYSICS, 80(10) 5915 - 5920, Nov. 1996, Scientific journal
  

  DOI URL
• Electric-field domain formation in type-II superlattices
  H Mimura; M Hosoda; N Ohtani; K Tominaga; K Fujita; T Watanabe; HT Grahn; K Fujiwara
  PHYSICAL REVIEW B, AMER PHYSICAL SOC, 54(4) R2323 - R2326, Jul. 1996, Scientific journal
  

  DOI URL
• Current self-oscillations in photoexcited type-II GaAs-AlAs superlattices
  M Hosoda; H Mimura; N Ohtani; K Tominaga; T Watanabe; K Fujiwara; HT Grahn
  APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 69(4) 500 - 502, Jul. 1996, Scientific journal
  

  DOI URL
• Influence of type-I to Type-II transition by an applied electric field on photoluminescence and carrier transport in GaAs/AlAs type-I short-period superlattices
  N Ohtani; H Mimura; M Hosoda; K Tominaga; T Watanabe; K Fujiwara
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, JAPAN J APPLIED PHYSICS, 35(2B) 1302 - 1305, Feb. 1996, Scientific journal
  

  DOI URL
• Anomalously delayed carrier transport in GaAs/AlAs thin-barrier superlattices
  N Ohtani; H Mimura; K Tominaga; M Hosoda; T Watanabe; G Tanaka; K Fujiwara
  SOLID-STATE ELECTRONICS, PERGAMON-ELSEVIER SCIENCE LTD, 40(1-8) 759 - 762, 1996, Scientific journal
  

  DOI URL
• EVIDENCE FOR GAMMA-CHI TRANSPORT IN TYPE-I GAAS/ALAS SEMICONDUCTOR SUPERLATTICES
  M HOSODA; N OHTANI; H MIMURA; K TOMINAGA; P DAVIS; T WATANABE; G TANAKA; K FUJIWARA
  PHYSICAL REVIEW LETTERS, AMERICAN PHYSICAL SOC, 75(24) 4500 - 4503, Dec. 1995, Scientific journal
  

  DOI URL
• DELAYED PHOTOCURRENT AFFECTED BY GAMMA-X RESONANCE IN GAAS/ALAS TYPE-I SHORT-PERIOD SUPERLATTICES
  H MIMURA; N OHTANI; M HOSODA; K TOMINAGA; T WATANABE; G TANAKA; K FUJIWARA
  APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 67(22) 3292 - 3294, Nov. 1995, Scientific journal
  

  DOI URL

MISC

• 無機有機ハイブリッドEL材料を用いた塗布型多層有機EL素子の作製
  大谷 直毅
  月刊ディスプレイ, 18(9) 26 - 30, Sep. 2012, Introduction commerce magazine
• 紫外領域で動作する高分子発光ダイオード
  大谷 直毅
  月刊マテリアルステージ, 4 - 5, May 2010, Introduction commerce magazine
• 紫外高分子発光ダイオードの長寿命化と短波長動作
  大谷 直毅
  同志社大学理工学研究所研究所報, 9 10 , May 2010, Report research institution
• 超高密度量子ドット作製技術
  大谷 直毅
  未来材料, 9(7) 26 - 31, Jul. 2009, Introduction commerce magazine
• 大容量光通信システムに用いられる面発光レーザの開発
  大谷 直毅
  同志社工学会報, 48 8 - 13, Dec. 2006, Report research institution
• Fabrication of Sb-based QDs for long-wavelength VCSELs
  YAMAMOTO Naokatsu; AKAHANE Kouichi; GOZU Shin-ichirou; UETA Akio; OHTANI Naoki; TSUCHIYA Masahiro
  Extended abstracts of the ... Conference on Solid State Devices and Materials, 2006 266 - 267, 13 Sep. 2006
• 超高密度半導体量子ドット形成技術
  赤羽浩一; 山本直克; 牛頭信一郎; 上田章雄; 大谷直毅; 土屋昌弘
  情報通信研究機構季報「光COE特集」, 情報通信研究機構, 52(3) 3 - 11, Sep. 2006, Technical report
• アンチモン系量子ドットレーザの開発
  大谷 直毅
  月刊光アライアンス, 16(7) 401 - 404, Dec. 2005, Introduction commerce magazine
• Interface states of AlSb/InAs heterointerface with AlAs-like interface
  GOZU Shin-ichiro; AKAHANE Kouichi; YAMAMOTO Naokatsu; UETA Akio; ANDO Taro; OHTANI Naoki
  Extended abstracts of the ... Conference on Solid State Devices and Materials, 2005 766 - 767, 13 Sep. 2005
• Selective Formation of Self-Organized InAs QDs on Patterned GaAs Substrates by Molecular Beam Epitaxy
  UETA Akio; AKAHANE Kouichi; GOZU Sinichiro; YAMAMOTO Naokatsu; OHTANI Naoki
  Extended abstracts of the ... Conference on Solid State Devices and Materials, 2005 366 - 367, 13 Sep. 2005
• 1.55-μm-waveband lasing operation of Sb-based quantum-dot vertical-cavity surface-emitting lasers (Sb-based QD-VCSELs) fabricated on GaAs substrate
  YAMAMOTO Naokatsu; AKAHANE Kouichi; GOZU Shin-ichirou; UETA Akio; OHTANI Naoki
  Extended abstracts of the ... Conference on Solid State Devices and Materials, 2005 94 - 95, 13 Sep. 2005
• Over 1.3 mu m continuous-wave laser emission from InGaSb quantum-dot laser diode fabricated on GaAs substrates
  N Yamamoto; K Akahane; S Gozu; N Ohtani
  APPLIED PHYSICS LETTERS, AMER INST PHYSICS, 86(20) 203118 , May 2005
  

  DOI URL
• Research on stripe-type lasers and VCSELs for 1.3μm-optical-wavebands operation by using Sb-based semiconductor nano-materials
  YAMAMOTO Naokatsu; AKAHANE Kouichi; GOZU Shin-ichirou; UETA Akio; OHTANI Naoki
  電気学会研究会資料. OQD, 光・量子デバイス研究会, 2004(47) 7 - 12, 10 Dec. 2004
• Research on Sb-based quantum dot vertical-cavity surface-emitting lasers for optical communication systems
  YAMAMOTO Naokatsu; AKAHANE Kouichi; GOZU Shin-ichirou; UETA Akio; OHTANI Naoki
  Technical report of IEICE. LQE, The Institute of Electronics, Information and Communication Engineers, 104(484) 15 - 20, 03 Dec. 2004
• 13pPSA-33 Non-Markovian process and decoherence of excitons in semiconductors
  Hasegawa A.; Hayase J.; Kishimoto T.; Mitsumori Y.; Yamamoto N.; Akahane K.; Ohtani N.; Minami F.; Sasaki M.
  Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), 59(2) 663 - 663, 25 Aug. 2004
• アンチモン系半導体量子ドットレーザの研究
  赤羽浩一; 山本直克; 大谷直毅
  情報通信研究機構季報「光COE特集」, 50(1-2) 75 - 80, May 2004, Technical report
• 29pXQ-4 Coupled mode of the coherent LO phonon and excitonic quantum beat in GaAs/AlAs multiple quantum wells
  Furuichi T.; Mizoguchi K.; Kojima O.; Nakayama M.; Yamamoto N.; Akahane K.; Ohtani N.
  Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), 59(1) 748 - 748, 03 Mar. 2004
• 光通信用アンチモン系半導体量子ドットレーザの研究開発
  山本直克; 赤羽浩一; 大谷直毅
  TELECOM FRONTIER, 42 29 - 35, Feb. 2004, Technical report
• Analysis of all-optical switching and memorizing device using a resonant photon tunneling effect
  YAMAMOTO Naokatsu; AKAHANE Kouichi; OHTANI Naoki
  Technical report of IEICE. OPE, The Institute of Electronics, Information and Communication Engineers, 102(657) 37 - 42, 14 Feb. 2003
• 光エレクトロニクスグループの研究紹介
  大谷 直毅
  光技術コンタクト, 40(467) 54 - 57, Oct. 2002, Introduction commerce magazine
• Photoluminescence from high Gamma-electron subbands and intersubband electroluminescence using X-Gamma carrier injection in a simple GaAs/AlAs superlattice
  C Domoto; T Nishimura; N Ohtani; K Kuroyanagi; PO Vaccaro; T Aida; H Takeuchi; M Nakayama
  JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, INST PURE APPLIED PHYSICS, 41(8) 5073 - 5077, Aug. 2002
  

  DOI URL
• Finite Period-Number Effects on the Coherent Folded Longitudinal Acoustic Phonons in GaAs/AlAs Superlattices
  Takeuchi H.; Hino T; Mizoguchi K; Nakayama M.; Ohtani N.; Kuroyanagi K; Aida T.
  Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), 56(1) 665 - 665, 09 Mar. 2001
• 半導体超格子を用いる光電流発振素子
  大谷 直毅
  ATRテクニカルレポート, TR-AC-0054, Mar. 2001, Technical report
• Coherent Phonons in GaAs/InAlAs(n11)-Oriented Superlattices
  Takeuchi H.; Mizoguchi K.; Nakayama M.; Domoto C.; Kuroyanagi K.; Ohtani N.; Aida T.
  Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), 55(2) 648 - 648, 10 Sep. 2000
• Photoluminescence from Stark-ladder states in GaAs/AlAs superlattices
  Okamoto S; Fukuda K.; Takeuchi H.; Nakayama M.; Otani N.; Aida T.
  Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), 55(2) 589 - 589, 10 Sep. 2000
• Phase Diagram of Static and Dynamic Electric Field Domain Formation in Semiconductor Superlattices
  N. Ohtani; N. Egami; H. T. Grahn; K. H. Ploog
  International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS), (MoP-38) 74 , Jul. 1999, Summary international conference
• Electric-field effects on photoluminescence properties in a GaAs/AlAs marginal type-Ⅰsuperlattice
  N. Ohtani; C. Domoto; N. Egami; H. Mimura; M. Ando; M. Nakayama; M. Hosoda
  International Conference on Modulated Semiconductor Structures (MSS), (19) 291 - 292, Jul. 1999, Summary international conference
• ミクロなサンドイッチで光を操る -化合物半導体光デバイス-
  大谷直毅; 黒柳和良; 堂本千秋
  ATRジャーナル, 35 8 - 9, Apr. 1999, Introduction commerce magazine
• Carrier Density Dependence and Phase Diagram of Static and Dynamic Domain Formation in Semiconductor Superlattices
  N. Ohtani; N. Egami; H. T. Grahn; K; H. Ploog
  18th Electronic Materials Symposium, (D5) 35 - 36, 1999, Summary national conference
• 半導体超格子サブバンドの可視化技術
  三村秀典; 細田誠; 大谷直毅; 横尾邦義
  表面科学, 19(5) 53 - 56, Nov. 1998, Introduction scientific journal
• Electric Field induced γ-X crossover in a GaAs/AlAs type-I superlattice
  ANDO M.; NAKAYAMA M.; NISHIMURA H.; OHTANI N.; EGAMI N.; HOSODA M.
  Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), 53(2) 192 - 192, 05 Sep. 1998
• Photoluminescence from higher-subbands of GaAs/AlAs SL
  DOMOTO Chiaki; OHTANI Naoki; VACCARO P.O
  Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), 53(2) 190 - 190, 05 Sep. 1998
• Electroluminescence in Undoped GaAs/AlAs Superlattices due to Avalanche Breakdown
  C. Domoto; N. Ohtani; K. Kuroyanagi; P. Vaccaro; N. Egami
  International Conference on Solid State Devices and Materials, 1998(C-6-5) 342 - 343, Sep. 1998, Summary international conference
• X-X Electron Resonance Detected by Type-ⅡPhotoluminescence in a GaAs/AlAs Superlattice
  M. Nakayama; M. Ando; H. Nishimura; N. Ohtani; N. Egami; K. Fujiwara; M. Hosoda
  International Conference on Physics of Semiconductors (ICPS), (Th-P46), Aug. 1998, Summary international conference
• Carrier Density and Temperature Dependence of Photocurrent Self-oscillation in GaAs/AlAs Superlattices
  N. Ohtani; N. Egami; H. T. Grahn; K. H. Ploog
  International Conference on Physics of Semiconductors (ICPS), (Th-P73), Aug. 1998, Summary international conference
• Photoluminescence detection of the X-electron resonance in a GaAs/AlAs type-II superlattice(jointly worked)
  NAKAYAMA M; ANDO M; KUMAMOTO Y; NISHIMURA H; OHTANI N; EGAMI N; FUJIWARA K; HOSODA M
  Physical Review B58, [11], 7216-7221 (1998), 58(11) 7216 - 7221, 1998
  

  DOI URL
• 5p-E-14 Appearance of the type-II photoluminescence in a GaAs/InAlAs type : I superlattice
  Ando M.; Nakayama H.; Nishimura H.; Kuroyanagi K.; Ohtani N.; Egami N.
  Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), 52(2) 151 - 151, 16 Sep. 1997
• Photocurrent Self-Oscillations in Undoped GaAs/AlAs Superlattices Modulated by an External AC Voltage
  N. Ohtani; N. Egami; K. Fujiwara; H. T. Grahn
  International Workshop on Nano Physics and Electronics (NEP), (L-04) 95 - 96, Sep. 1997, Summary international conference
• Influence of Γ-X Resonance on Current-Voltage Characteristics in GaAs/InAlAs Strained Superlattices
  K. Kuroyanagi; N. Ohtani; N. Egami; K. Tominaga; M. Ando; M. Nakayama
  International Conference on Solid State Devices and Materials (SSDM), (D-5-3) 236 - 237, Sep. 1997, Summary international conference
• Observation of Gamma-X resonances in type-I GaAs/AlAs semiconductor superlattices: Anomaly in photoluminescence
  M Hosoda; H Mimura; N Ohtani; K Tominaga; K Fujita; T Watanabe; H Inomata; M Nakayama
  PHYSICAL REVIEW B, AMERICAN PHYSICAL SOC, 55(20) 13689 - 13696, May 1997
  

  DOI URL
• 31a-R-7 Electric-Field Dependence of Photoluminescence Properties in a GaAs/AlAs Type-II Superlatiice
  Ando M; Kumamoto Y; Nakayama M; Nishimura H; Hosoda M; Ohtani N; Kuroyanagi K; Egami N; Fujiwara K
  Meeting abstracts of the Physical Society of Japan, The Physical Society of Japan (JPS), 52(1) 233 - 233, 17 Mar. 1997
• GaAs/AlAs type-II超格子における光励起電流発振
  三村秀典; 細田誠; 大谷直毅; 冨永浩司
  ATRテクニカルレポート, TR-O-0108, Mar. 1996, Technical report
• 半導体超格子中のGamma-X transferのキャリア輸送に対する影響
  大谷直毅; 三村秀典; 冨永浩司; 細田誠
  ATRテクニカルレポート, TR-O-0094, Mar. 1996, Technical report
• 3-5 アンチモン系半導体量子ドットレーザの研究
  赤羽浩一; 山本直克; 大谷直毅
  情報通信研究機構季報「光COE特集」, 50(1-2) 75 - 80, Technical report

Books etc

• Introduction to semiconductor electric devices
  OHTANI Naoki
  Morikita Publishing Co., Ltd., Oct. 2019, Single work, Scholarly book

Presentations

• Synthesis of Eu Complexes with Dibenzoylmethane and 2,2’-bipyridyl Ligands and Preparation of Luminescent Thin Films by Wet-process
  H. Ueda; S. Kanagawa; K. Suyama; N. Ohtani
  2023 International Display Workshops (IDW’23), 07 Dec. 2023
• Preparation of dispersible carbon nitride powder and fabrication of its thin films by wet-process
  S. Minato; H. Nagata; M. Matsuda; N. Ohtani
  2023 KJF International Conference on Organic Materials for Electronics and Photonics (KJF- ICOMEP 2023), 01 Sep. 2023
• Preparation of silica-based organic- inorganic hybrid fluorescent thin films and vanadium-based thin films for improved conduc- tivity by sol-gel method”, in Proceedings of The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2023)
  M. Tachibana; K. Fukui; K. Tanigawa; N. Ohtani
  The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2023), Jun. 2023
• Fabrication of sodium-doped graphitic carbon ni- tride for photoelectrochemical water splitting into hydrogen
  Y. Kurita; M. Aoki; N. Ohtani
  The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nan- otechnologies (EM-NANO2023), Jun. 2023
• Anomalous photolu- minescence branches caused by electric-field domain formations in GaAs/AlAs asymmetric double quantum well
  R. Murohara; S. Nishiyama; M. Hosoda; K. Akahane; N. Ohtani
  The 9th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2023), Jun. 2023
• Preparation of red fluorescent materials for solution process using europium-doped benzoguanamine
  T. Niimi; H. Takemura; N. Ohtani
  The 9th In- ternational Symposium on Organic and Inorganic Electronic Materials and Related Nan- otechnologies (EM-NANO2023), Jun. 2023
• Examination of proper impurity doping and annealing conditions for solution processed Ga2O3 thin films
  A. Momota; T. Shibahara; C. Li; N. Ohtani
  The 4th International Workshop on Gallium Oxide and Related Materials (IWGO2022), Oct. 2022
• Extraction of Natural Blue Emissive Pigments from Fraxinus Lanuginose by Column Chromatography
  T. Ohtsu; R. Ono; Y. Kinou; S. Matsukura; N. Ohtani
  2022 KJF International Conference on Organic Materials for Electronics and Photonics (KJF-ICOMEP 2022), Sep. 2022
• Improvement of Photocatalytic Effect of Carbon Nitride Dispersed in Calcium Alginate Thin Films by Using Platinum Cocatalyst and Application to Water Decomposition
  K. Mizuno; Y. Kurita; M. Aoki; N. Ohtani
  2022 KJF International Conference on Organic Materials for Electronics and Photonics (KJF-ICOMEP 2022), Sep. 2022
• Analysis of electric-field domain formations and carrier transport phenomena in GaAs/AlAs asymmetric double-quantum-well superlattices
  S. Nishiyama; R. Murohara; T. Matsui; M. Hosoda; K. Akahane; N. Ohtani
  The 20th International Conference on Modulated Semiconductor Structures (MSS20), Oct. 2021
• Analysis of electric-field domain formations and carrier transport phenomena in GaAs/AlAs asymmetric double-quantum-well superlattices
  T. Matsui; S. Nishiyama; S. Goto; M. Hosoda; K. Akahane; N. Ohtani
  EM-NANO 2021, 02 Jun. 2021
• Solution-processed light-emitting diodes consisting of metal-oxide and organic-inorganic hybrid emissive thin films
  R. Kasuga; M. Tachibana; N. Ohtani
  EM-NANO 2021, 01 Jun. 2021
• Preparation of carbon nitride thin films alginate gel for application to water decomposition by photocatalytic effect
  K. Mizuno; N. Ohtani
  The 3rd International Symposium on Recent Progress of Energy and Environmental Photocatalysis, Nov. 2019, Oral presentation
• Influence of strong acid on structural and photoluminescence properties of nano-amorphous graphitic carbon nitride dispersed in nitric acid
  T. Watanabe; M. Hirai; K. Takarabe; N. Ohtani
  The 9th Asia-Pacific Workshop on Widegap Semiconductors, Nov. 2019, Oral presentation
• Fabrication of organic-inorganic hybrid thin films by sol-gel processusing metal-alkoxide
  R. Kasuga; N. Ohtani
  The 7th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2019), 20 Jun. 2019, Oral presentation
• Study of isolation method of green fluorescent pigments contained in cherry tomatoes using column chromatography
  A. Noma; N. Ohtani
  The 7th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2019), 20 Jun. 2019, Oral presentation
• Separation of blue fluorescent pigments contained in Fraxinus lanuginosa f. serrata using reverse-phase column chromatography and investigation of luminescent properties
  T. Ohtsu; Y. Kinoe; N. Ohtani
  The 7th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2019), 20 Jun. 2019, Oral presentation
• Preparation of organic-inorganic hybrid emissive thin films by sol-gel reaction using photo-curing binary crosslinking
  Y. Jitsui; N. Ohtani
  XX International Sol-Gel Conference (Sol-gel 20), Jun. 2019, Oral presentation
• Fabrication of nano-amorphous graphitic carbon nitride dispersion and preparation of thin films by electrostatic-spraying method
  T. Watanabe; M. Hirai; K. Takarabe; N. Ohtani
  The 7th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies} (EM-NANO 2019), Jun. 2019, Oral presentation
• Improvement of resistance of solution-processed ZnO Film by controlling annealing condition
  T. Nojiri; N. Ohtani
  The 7th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies} (EM-NANO 2019), Jun. 2019, Oral presentation
• Preparation of colloidal fluorescent quantum dot thin films by electrostatic spraying deposition
  R. Yamada; D. Kim; N. Ohtani
  Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2019), Jun. 2019, Oral presentation
• Photoluminescence properties of emissive polymer MEH-PPV affected by antioxidant effect of natural beta-carotene extracted from spinach
  Y. Magata; S. Imada; N. Ohtani
  Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2019), Jun. 2019, Oral presentation
• Fabrication of nano-amorphous graphitic carbon nitride thin film by wet process and its optical properties
  T. Watanabe; M. Hirai; K. Takarabe; N. Ohtani
  the International Workshop on Nitride Semiconductors (IWN2018), Nov. 2018, Poster presentation
• Preparation of Graphitic Carbon Nitride Thin Films by Evaporating Melamine
  S. Minato; N. Ohtani
  the International Workshop on Nitride Semiconductors (IWN2018), Nov. 2018, Poster presentation
• Study on extraction method of blue emissive pigments contained in fraxinus lanuginose
  Y. Kinou; N. Ohtani
  the International Conference on Organic Materials for Electronics and Photonics (KJF-ICOMEP 2018), Sep. 2018, Poster presentation
• Modulation of photoluminescence properties of emissive polymers induced by mixing of beta-carotene
  S. Imada; N. Ohtani
  the International Conference on Organic Materials for Electronics and Photonics (KJF-ICOMEP 2018), Sep. 2018, Poster presentation
• Fabrication and Characterization of Carbon Nitride Fluorescent Material Using Annealed Melamine
  K. Wada; N. Ohtani
  the 34th International Conference on the physics of semiconductors (ICPS34), Jul. 2018, Poster presentation
• Natural dye-sensitized solar cells containing anthocyanin dyes extracted from frozen blueberry using column chromatography method
  A. Mizuno; G. Yamada; N. Ohtani
  the 7th World Conference on Photovoltaic Energy Conversion (WCPEC-7), Jun. 2018, Poster presentation
• Fabrication of emissive thin films using nano-amorphous graphitic carbon nitride powders
  T. Watanabe; M. Hirai; K. Takarabe; N. Ohtani
  The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), Jun. 2017, Poster presentation
• Fabrication of Carbon Nitride-based Emissive Thin Films by Wet Process Using Annealed Melamine
  K. Wada; N. Ohtani
  The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), Jun. 2017, Poster presentation
• Blue-color photoluminescence from natural pigments extracted from Fraxinus lanuginosa
  Y. Kinou; N. Ohtani
  The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), Jun. 2017, Poster presentation
• Antioxidant effect of β-carotene and lutein isolated and purified from spinach on photoluminescence lifetime of organic emissive materials
  S. Imada; T. Ito; N. Ohtani
  The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), Jun. 2017, Poster presentation
• Carrier transport and photoluminescence properties in GaAs/AlAs asymmetric multiple-quantum well superlattices affected by resonances and scatterings between higher subband energies
  N. Ohtani; M. Hosoda
  the XXV International Materials Research Congress (IMRC), Aug. 2016, Invited oral presentation
• Photoluminescence properties affected by subband resonances and scatterings in GaAs/AlAs asymmetric sevenfold multiple quantum wells
  R. Wang; K. Hada; K. Yoshida; M. Hosoda; K. Akahane; N. Ohtani
  the 33rd International Conference on the Physics of Semiconductors (ICPS2016), Jun. 2016, Poster presentation
• Fabrication of organic light-emitting diodes and dye-sensitized solar cells using pigments extracted from plants
  OHTANI Naoki
  the 2015 International Electron Devices and Materials Symposium (IEDMS 2015), Nov. 2015, Poster presentation
• Evaluation of Antioxidant Effect of Carotenoids Extracted from Spinach Using Column Chromatography Method for Improving Photoluminescence Lifetime of Organic Emissive Materials
  T. Ito; A. Emoto; N. Ohtani
  the 2015 KJF International Conference on Organic Materials for Electronics and Photonics (KJF-ICOMEP 2015), Sep. 2015, Poster presentation
• Dye sensitized solar cells containing anthocyanin dyes extracted from frozen red cabbages
  D. Isoda; S. Togo; A. Emoto; N. Ohtani
  the 1st International Caparica Conference on Chromogenic and Emissive Materials} (IC3EM), Sep. 2014, Poster presentation
• Optical properties of pigments extracted from vegetables and application to light-emitting diodes
  N. Ohtani; T. Morikawa; Y. Katano; Y. Nishida; A. Emoto
  the 25th Conference of the Condensed Matter Division of the EPS (CMD25), Aug. 2014, Poster presentation
• Inorganic-organic hybrid light-emitting diodes driven by low dc voltage containing CdSe-ZnS core-shell quantum dot emitters
  N. Ohtani; Y. Hagimoto; S. Yoshikawa
  the 32nd International Conference on the Physics of Semiconductors (ICPS-32), Aug. 2014, Poster presentation
• Improved light emission properties and operation lifetime of multi-layered organic light-emitting diodes using dyes extracted from spinach
  Y. Nishida; N. Ohtani
  the 8th International Symposium on Organic Molecular Electronics (ISOME 2014), May 2014, Poster presentation
• High efficient carrier injection into wide-bandgap polymer emissive materials and application to light-emitting diodes operating in the ultraviolet region
  N. Ohtani; M. Takahashi
  the 18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON18), Jul. 2013, Poster presentation
• Evaluation of antioxidant effect of carotenoid extracted from plants on the operating lifetime of organic light-emitting diodes
  Y. Nishida; N. Ohtani
  the 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013), Jun. 2013, Poster presentation
• Organic light-emitting diodes consisting of SiO2 active layer in which emissive organic materials are dispersed
  Y. Jitsui; S. Kimura; N. Ohtani
  the 31st International Conference on the Physics of Semiconductors (ICPS2012), Jul. 2012, Poster presentation
• Transmission electron microscope observation of organic-inorganic hybrid thin active layers of light-emitting diodes
  Y. Jitsui; N. Ohtani
  the International Conference on Superlattices, Nanostructures, and Nanodevices 2012 (ICSNN2012), Jul. 2012, Poster presentation
• Organic near-infrared photodiodes containing a wide-bandgap polymer and an n-type dopant in the active layer
  N. Ohtani; K. Nakajima; K. Bando
  the 4th International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA10), Aug. 2010, Poster presentation
• Excitonic Rabi oscillations in semiconductor quantum dot observed by photon echo spectroscopy
  K. Asakura; Y. Mitsumori; H. Kosaka; K. Edamatsu; K. Akahane; N. Yamamoto; M. Sasaki; N. Ohtani
  the 30th International Conference on the Physics of Semiconductors (ICPS-30), Jul. 2010, Poster presentation
• Fabrication of organic light-emitting diodes using photosynthetic-pigments extracted from spinach
  N. Ohtani; N. Kitagawa; T. Matsuda
  the 3rd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2010), Jun. 2010, Poster presentation
• Wavelength-tunable organic light emitting diode using Poly [methylmethacrylate-co- (7- (4-trifluoromethyl) coumarin acrylamide)] (PCA)
  大谷 直毅
  13th International Conference on Modulated Semiconductor Structures (MSS13), 2007, Genova, Italy
• Various photoluminescence properties due to G-X resonance in type-I GaAs/AlAs multi-quantum wells consisting of quantum wells with different thicknesses
  大谷 直毅
  nternational Conference on Modulated Semiconductor Structures (MSS13), 2007, Genova, Italy
• Influence of interface roughness on photoluminescence property in GaAs/AlAs multi-quantum wells under electric field
  大谷 直毅
  2007 International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO2007), 2007, 長野
• Various photoluminescence property observed in a GaAs/AlAs asymmetric double-quantum-well superlattice
  大谷 直毅
  International Conference on Superlattices, Nano-Structures and Nano-Devices, 2006, Istanbul, Turkey
• Influence of L subband states on optical and electric properties in GaAs/AlAs type-I superlattices
  大谷 直毅
  the 28th International Conference on Physics of Semiconductors (ICPS-28), 2006, Vienna, Austria
• Optical semiconductor devices of quantum structures - Sb-based quantum dot lasers and VCSELs -
  大谷 直毅
  RLE at MIT and NICT Joint symposium on phtonic devices and systems, 2005, Boston, USA
• Anomalous photoluminescence branches observed in an asymmetric double-quantum-well superlattice
  大谷 直毅
  International Conference on Superlattices, Nano-structures and Nano-devices 2004 (ICSNN 2004), 2004, Cancun, Mexico
• 半導体量子ドット光デバイスの研究
  大谷 直毅
  NICT第1回研究発表会, 2004, 東京
• Formation of electric-field domains in an asymmetric double-quantum-well GaAs/AlAs superlattice
  大谷 直毅
  13th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors} (HCIS13), 2003, Modena, Italy
• Uniaxial-strain-induced transition from type-II to type-I band configuration of quantum well microtubes
  大谷 直毅
  11th International Conference on Modulated Semiconductor Structures (MSS-11), 2003, Nara, Japan
• Photoluminescence property of uniaxially strained GaAs/AlGaAs quantum wells contained in a micro-tube
  大谷 直毅
  International Conference on the Superlattices, Nano-structures and Nano-devices (ICSNN2002), 2002, Toulouse, France
• 超格子における光電流振動
  大谷 直毅
  応用物理学会関西支部セミナー, 2001, 大阪
• Observation of electron transport in GaAs/AlAs type-II superlattices under an electric field
  大谷 直毅
  2000 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD2000), 2000, Melbourne, Australia
• Photocurrent self-oscillations in weakly coupled, type-II GaAs/AlAs superlattices embedded in p-i-n and n-i-n diodes
  大谷 直毅
  25th International Conference on the Physics of Semiconductors (ICPS25), 2000, Osaka, Japan
• Observation of anomalous photoluminescence originating from higher-energy state mixings in GaAs/AlAs superlattices
  大谷 直毅
  第19回電子材料シンポジウム, 2000, 静岡
• Observation of anomalous photoluminescence originating from higher-energy state mixings in GaAs/AlAs superlattices
  大谷 直毅
  18th General Conference of the Condensed Matter Divison of the European Physical Society (CMD18), 2000, Montreux, Switzerland
• Anomalous photoluminescence originating from resonance between X and intermediate states in GaAs/AlAs superlattices
  大谷 直毅
  1999 International Conference on Luminescence and Optical Spectroscopy of Condensed Matter (ICL'99), 1999, Osaka, Japan
• Phase diagram of static and dynamic electric field domain formation in semiconductor superlattices
  大谷 直毅
  11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11), 1999, Kyoto, Japan
• Electric-field effects on photoluminescence properties in a GaAs/AlAs marginal type-I superlattice
  大谷 直毅
  9th International Conference on Modulated Semiconductor Structures (MSS-9), 1999, Fukuoka, Japan
• Carrier density dependence and phase diagram of static and dynamic domain formation in semiconductor superlattices
  大谷 直毅
  第18回電子材料シンポジウム, 1999, 南紀白浜
• 弱結合半導体超格子における光電流連続発振のキャリア密度および温度依存性
  大谷 直毅
  光物性研究会98, 1998, 奈良
• Carrier density and temperature dependence of photocurrent self-oscillations in GaAs/AlAs superlattices
  大谷 直毅
  24th International Conference on Physics of Semiconductors (ICPS-24), 1998, Jerusalem, Israel
• Observation of chaotic photocurrent oscillations in GaAs/AlAs superlattices modulated by an external AC voltage
  大谷 直毅
  光物性研究会97, 1997, 大阪
• Carrier density dependence of transitions between chaotic and periodic photocurrent oscillations in undoped GaAs/AlAs superlattices
  大谷 直毅
  12th International Conference on Electronic Properties of Two-Dimensional Systems (EP2DS-12), 1997, Tokyo, Japan
• Current self-oscillations in undoped, photoexcited GaAs/AlAs type-I superlattices
  大谷 直毅
  International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, 1997, Berlin, Germany
• Photocurrent self-oscillations in undoped GaAs/AlAs superlattices modulated by an external ac voltage
  大谷 直毅
  International Workshop on Nano-physics and Electronics (NPE'97), 1997, Tokyo, Japan
• Influence of X states on photoluminescence in type-I GaAs/AlAs semiconductor superlattices
  大谷 直毅
  電子情報通信学会技術研究報告レーザ量子エレクトロニクス研究会, 1996, 東京
• Photocurrent self-oscillations in undoped indirect band-gap GaAs/AlAs superlattices
  大谷 直毅
  2nd Asia Symposium on Condensed Matter Photophysics (ASCMP-2), 1996, 奈良
• Current self-oscillation originating from resonant tunneling through X states in GaAs/AlAs type-II superlattices
  大谷 直毅
  23rd International Conference on the Physics of Semiconductors (ICPS-23), 1996, Berlin, Germany
• Stark ladder photoluminescence of X states in GaAs/AlAs type-I superlattices
  大谷 直毅
  1996 International Conference on Solid State Devices and Materials (SSDM'96), 1996, 横浜
• Influence of G-X mixing on carrier transport and photoluminescence in GaAs/AlAs type-I superlattices
  大谷 直毅
  9th International Conference on Superlattices, Microstructures and Microdevices (ICSMM-9), 1996, Liege, Belgium
• Influence of type-I to type-II transition by an applied electric field on photoluminescence and carrier transport in GaAs/AlAs type-I short-period superlattices
  大谷 直毅
  1995 International Conference on Solid State Devices and Materials (SSDM'95), 1995, 大阪
• Anomalously delayed carrier transport in GaAs/AlAs thin-barrier superlattices
  大谷 直毅
  7th International Conference on Modulated Semiconductor Structures (MSS7), 1995, Madrid, Spain

Industrial Property Rights

• Patent right
  Light-emitting materials, method for producing this light-emitting materials, and ink composition using this light-emitting materials
  Naoki Ohtani, and Naohiro Niimi
  特願2022-134201, 学校法人同志社
• Patent right
  有機ー無機ハイブリッド材料及びその用途ならびに有機ー無機ハイブリッド薄膜の製造方法
  大谷直毅, 宮代 明
  特願2020-136599
• Patent right
  分散性窒化炭素の製造方法、これを用いた窒化炭素分散液の製造方法及び発光素子の製造方法
  大谷直毅, 湊祥太
  特願2020-095220
• Patent right
  窒化炭素分散液及びこれを用いた窒化炭素膜の成膜方法
  大谷 直毅, 渡辺 貴大
  特願2019-094473
• Patent right
  有機発光ダイオード
  大谷 直毅
  特願2014-264021
• Patent right
  有機発光ダイオードおよびその製造方法
  大谷 直毅
  特願2012-040910
• Patent right
  有機発光ダイオード
  大谷 直毅
  特願2010-243483
• Patent right
  高分子紫外発光素子
  大谷 直毅
  特願2008-189524
• Patent right
  低格子不整合における量子ドットの形成方法および量子ドット半導体素子
  3903182
• Patent right
  光空間伝搬特性の評価装置
  3660992
• Patent right
  超格子半導体発光装置
  2941270
• Patent right
  半導体発光装置とその製造方法並びに光導波路装置とその製造方法
  2918881
• Patent right
  超格子半導体装置
  2950801
• Patent right
  超格子半導体装置
  3083768

Research Projects

• 希土類をドープする窒化炭素による光三原色の発光材料の結晶構造および光学特性の評価
  文部科学書 科学研究費助成事業, 2023/04 -2026/03, Principal investigator
• 植物から抽出した天然カロテノイド系色素を用いる有機発光ダイオードの高性能化
  大谷 直毅
  文部科学書, 科学研究費助成事業, 2016/04 -2019/03, Principal investigator, Competitive research funding
• 植物から抽出した天然色素を用いる有機発光ダイオードの開発
  大谷 直毅
  文部科学省, 科学研究費助成事業, 2013/04 -2016/03, Principal investigator, Competitive research funding
• 高効率な微小リング共振器を有するマイクロチューブレーザの開発
  大谷 直毅
  文部科学省, 科学研究費助成事業, 2009/04 -2012/03, Principal investigator, Competitive research funding
• 紫外領域で動作する高分子有機ELの開発
  大谷 直毅
  独立行政法人科学技術振興機構, シーズ発掘試験研究, 2010/04 -2011/03, Principal investigator, Competitive research funding
• 非可視光領域で動作する新規有機ナノ構造光学材料の開発
  大谷 直毅
  文部科学省, 科学研究費助成事業, 2006/04 -2009/03, Principal investigator, Competitive research funding
• 非可視光領域で動作する新規有機ナノ構造光学材料の開発
  基盤研究（Ｃ）（一般）, 2006 -2007, Competitive research funding
• Compound semiconductor photonic devices, organic electroluminescence, nano-technology
  Competitive research funding

Teaching Experience

• ゼミ演習
  同志社大学
• 電子工学実験II
  同志社大学
• 電気基礎実験I
  同志社大学
• 電気回路学I, II
  同志社大学
• Electric circuit theory
  同志社大学大学院
• 専攻共通特殊講義（ナノテクノロジー）
  同志社大学大学院
• 光電子デバイス特論
  同志社大学大学院
• 電子回路
  同志社大学
• 電子デバイスI, II
  同志社大学
• 光通信工学
  同志社大学

Research Seeds

• Organic EL element activated in the ultraviolet wavelengh region

  Research Fields: Electric and Electronics, Chemicals, Nanotechnology and Materials

  Affiliation/Name: Naoki Ohtani